A method for edge rounding in a replacement of the gate of the method on the basis of a victim of filling material, which before the deposition of the exit work metal is applied

摘要

A method with:Forming an opening, which has a width in a gate electrodes structure of a transistor, by removal of a space holder electrodes material of the gate electrodes structure;Forming a victim of filling material in the opening, in order to cover at least one lower side of the opening;Increasing the width of the opening in which the sacrificial fill material is formed, on an upper portion of the filling material in the presence of the victims;Removal of the victims of the filling material from the opening;Forming a layer of material at the side walls and the underside of the opening, which the greater width at the upper area, wherein the material layer, a discharge end of adjustment work, a substance, in order to adjust the work function of a gate electrode; andIntroduction of a conductive electrode material in the opening above the material layer.