A method for controlling the power loading of a mos - power transistor by means of a polycrystalline pn - diode

摘要

The document a method for regulating the temperature of a mos - transistor (tr), wherein the mos - transistor (tr) together with a temperature measuring means (poly _ d) monolithically on a substrate (sub) is accommodated andthe mos - transistor of one or more transistor fingers (tr1, tr2) is. Serving as a temperature measuring device, poly - silicon - pn - diode (poly _ d) is in polycrystalline silicon (psd), the electrically of the parts (tr₁, Tr₂, S₁, G₁, S₂, G₂) of the mos - transistor (tr) and, in particular, of the gate - electrodes (g₁, G₂) of the mos - transistor (tr) is insulated by an electrical insulation. An electrical parameters of the temperature measuring means (poly _ d) is detected. This serves as a measured value or from the latter, by means of an evaluation device such a measured value derived.The temperature measuring means (poly _ d) is connected, in this case, in a thermal connection to this mos - transistor, or a part (tr₁, Tr₂, S₁, G₁, S₂, G₂) this mos - transistor (tr). The said electrical parameters of the temperature measuring means (poly _ d) in this case depends on the temperature of at least a portion (tr₁, Tr₂, S₁, G₁, S₂, G₂) of the mos - transistor (tr) and / or of a transistor finger (tr₁, Tr₂) of the mos - transistor (tr) from.