Semiconductor-metal transition

摘要

A semiconductor device (1) is proposed. The semiconductor device comprises a diffusion barrier layer (11), a first semiconductor region (12) with first charge carriers of a first conductivity type and a second semiconductor region (13) with second charge carriers. The first semiconductor region (12) includes a junction region (123) in contact with the second semiconductor region (13), the junction region (123) having a first concentration of the first carriers; a contact region (121) in contact with the diffusion barrier layer (11), the contact region (121) having a second concentration of the first carriers greater than the first concentration; a damage region (122) disposed between the contact region (121) and the transition region (123), wherein the damage region (122) is configured to reduce the lifetime and / or mobility of the first charge carriers of the damage region (122) as compared to the lifetime and / or the mobility of the first charge carriers of the contact region (121) and the transition region (123).