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A method of making rare earth element doped piezoelectric material having varying amounts of dopant and a selected C-axis orientation

机译:一种制备具有变化量的掺杂剂和选定的C轴取向的稀土元素掺杂的压电材料的方法

摘要

A method for producing a rare earth element doped piezoelectric material comprising a first component, a second component and the rare earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initial flow of hydrogen over the substrate, flowing the first component to form the rare earth element doped piezoelectric material over a surface of a single target, the target comprising the rare earth element in a certain atomic percentage; and sputtering the rare earth element doped piezoelectric material from the target onto the substrate.
机译:一种制备稀土元素掺杂的压电材料的方法,该压电材料包括第一组分,第二组分和稀土元素。该方法包括:提供基板;首先使氢流过衬底;在氢初始流过衬底之后,使第一组分流动以在单个靶材的表面上形成掺杂稀土元素的压电材料,该靶材以一定原子百分比包含稀土元素;并将掺杂有稀土元素的压电材料从靶溅射到衬底上。

著录项

  • 公开/公告号DE102015107569A1

    专利类型

  • 公开/公告日2015-11-19

    原文格式PDF

  • 申请/专利权人 AVAGO TECHNOLOGIES GENERAL IP PTE. LTD.;

    申请/专利号DE201510107569

  • 发明设计人 JOHN D. LARSON;

    申请日2015-05-13

  • 分类号H01L41/22;H03H9/17;

  • 国家 DE

  • 入库时间 2022-08-21 14:09:30

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