HIGH-DENSITY RESISTIVE DIRECT ACCESS MEMORY (RRAM)

摘要

A structure of a resistive random access memory (RRAM) is formed on a carrier substrate and includes a first electrode and a second electrode. The first electrode is made of a silicided fin on the carrier substrate and a first metal capping layer covering the silicided fin. A dielectric material layer having a configurable resistive property covers at least a portion of the first metal capping layer. The second electrode is made of a second metal cap layer covering the dielectric material layer and a metal fill in contact with the second metal cap layer. A non-volatile memory cell includes the RRAM structure electrically connected between an access transistor and a bit line.