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BARRIER FILM TECHNIQUES AND CONFIGURATIONS FOR PHASE-CHANGE MEMORY ELEMENTS
BARRIER FILM TECHNIQUES AND CONFIGURATIONS FOR PHASE-CHANGE MEMORY ELEMENTS
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机译:相变存储元件的阻挡膜技术和配置
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摘要
Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a bottom electrode layer, a select device layer disposed on the bottom electrode layer, a middle electrode layer disposed on the select device layer, a phase-change material layer disposed on the middle electrode layer, a top electrode layer disposed on the phase-change material layer, and a barrier film comprising a group IV transition metal, a group VI transition metal, carbon (C) and nitrogen (N), the barrier film being disposed between the bottom electrode layer and the top electrode layer. Other embodiments may be described and/or claimed.
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