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HIGH-RESISTIVE SILICON SUBSTRATE WITH A REDUCED RADIO FREQUENCY LOSS FOR A RADIO-FREQUENCY INTEGRATED PASSIVE DEVICE
HIGH-RESISTIVE SILICON SUBSTRATE WITH A REDUCED RADIO FREQUENCY LOSS FOR A RADIO-FREQUENCY INTEGRATED PASSIVE DEVICE
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机译:射频集成无源器件具有降低的射频损耗的高电阻硅基板
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摘要
The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice damage zone is processed into the substrate and the preserved lattice damage zone is configured to achieve the RF loss reduction of the substrate by suppressing a parasitic surface conduction.
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