首页> 外国专利> MEASUREMENT METHOD FOR PLASMA STATE IN PLASMA PROCESSING APPARATUS, AND PLASMA MEASUREMENT DEVICE USED FOR THE MEASUREMENT METHOD

MEASUREMENT METHOD FOR PLASMA STATE IN PLASMA PROCESSING APPARATUS, AND PLASMA MEASUREMENT DEVICE USED FOR THE MEASUREMENT METHOD

机译:等离子体处理装置中的等离子体状态的测定方法以及用于该测定方法的等离子体测定装置

摘要

PROBLEM TO BE SOLVED: To provide a measurement method for a plasma state in a plasma processing apparatus capable of accurately measuring the plasma state in each of fine regions within a measuring surface, and a plasma measurement device used for the measurement method.;SOLUTION: On a measurement surface of a measurement base, an electrical shield pattern and multiple electrodes having the same or substantially same electrode surface are provided, the electrode being defined by the shield pattern, and on a front face where the electrodes are provided, the electrodes are disposed while being electrically independent of each other. At a rear face side where a surface area of the electrodes is opposite to the measurement surface, signal processing means is provided for performing signal processing on electric signals from the electrodes.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:提供一种等离子体处理设备中的等离子体状态的测量方法,该方法能够准确地测量测量表面内每个细微区域中的等离子体状态,以及用于该测量方法的等离子体测量装置。在测量基座的测量表面上,提供电屏蔽图案和具有相同或基本相同的电极表面的多个电极,该电极由屏蔽图案限定,并且在设置有电极的正面上,电极设置为彼此电独立。在电极的表面积与测量表面相对的背面侧,提供了信号处理装置,用于对来自电极的电信号进行信号处理。选图:图1;版权:(C)2018,JPO&INPIT

著录项

  • 公开/公告号JP2017188236A

    专利类型

  • 公开/公告日2017-10-12

    原文格式PDF

  • 申请/专利权人 TOHOKU UNIV;

    申请/专利号JP20160074814

  • 发明设计人 HIRAYAMA MASAKI;

    申请日2016-04-03

  • 分类号H05H1/00;

  • 国家 JP

  • 入库时间 2022-08-21 14:01:43

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