首页> 外国专利> HYDROGEN PLASMA PROCESSING DEVICE AND HYDROGEN PLASMA PROCESSING METHOD

HYDROGEN PLASMA PROCESSING DEVICE AND HYDROGEN PLASMA PROCESSING METHOD

机译:氢等离子体处理装置及氢等离子体处理方法

摘要

PROBLEM TO BE SOLVED: To provide: a hydrogen plasma processing device having a substrate-transporting arrangement which contributes to the increase in production efficiency; and a hydrogen plasma processing method.SOLUTION: A hydrogen plasma processing device 10 comprises: an atmospheric pressure process chamber 12; a plasma head 14 set in the atmospheric pressure process chamber 12, and serving to generate a line form of hydrogen-containing plasma P; and a transporting part 16 set in the atmospheric pressure process chamber 12, and serving to transport a disc-like substrate in a thickness direction of the plasma with respect to the plasma head 14, provided that the disc-like substrate has a substrate diameter longer than a thickness of the plasma and shorter than a width of the plasma. The transporting part 16 includes a round heating region for holding and heating the disc-like substrate, which has a shape corresponding to that of the disc-like substrate.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种氢等离子体处理装置,该氢等离子体处理装置具有有助于提高生产效率的基板输送装置。解决方案:氢等离子体处理装置10包括:大气压处理室12;和氢等离子体处理装置10。等离子体头14设置在大气压处理室12中,用于产生线形的含氢等离子体P。输送部16设置在大气压处理室12中,并且用于在相对于等离子体头14的等离子体的厚度方向上输送盘状基板,只要盘状基板的基板直径更长。小于等离子体的厚度并且小于等离子体的宽度。输送部分16包括用于保持和加热盘状基板的圆形加热区域,该圆形加热区域具有与盘状基板的形状相对应的形状。

著录项

  • 公开/公告号JP2017123372A

    专利类型

  • 公开/公告日2017-07-13

    原文格式PDF

  • 申请/专利权人 SHI EXAINATION & INSPECTION LTD;

    申请/专利号JP20160000473

  • 发明设计人 ITO SEISHI;TAKAI SHIGEKI;

    申请日2016-01-05

  • 分类号H01L21/265;H05H1/24;

  • 国家 JP

  • 入库时间 2022-08-21 14:01:34

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号