MAGNETIC PROPERTY CONTROL STRUCTURE AND METHOD USING SOLID ELECTROCHEMICAL REACTION, AND VARIABLE MAGNETORESISTIVE ELECTRIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a structure for dynamically controlling a magnetic property of a half metal material externally, and a tunnel magnetoresistive device using the same.SOLUTION: When electrons are injected into a half metal ferromagnetic substance, the total number of spins in the material is changed, and a magnetic property changes. Specifically, when a half metal ferromagnetic substance layer, an ion (e.g., Li) conduction medium layer, and an electrode functioning as an ion supply source are laminated in this order and a positive voltage is applied to an electrode side, ion (positive ions) are injected into the ferromagnetic layer, and electrons are also injected. The magnetic property is changed in the half metal magnetic substance layer by the electron injection. A tunnel magnetoresistive element can be configured by controlling tunnel magnetoresistance between two half metal ferromagnetic substance layers with an insulator layer interposed therebetween.SELECTED DRAWING: Figure 3