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I-III-VI TYPE CHALCOPYRITE COMPOUND SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN-FILM SOLAR BATTERY
I-III-VI TYPE CHALCOPYRITE COMPOUND SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN-FILM SOLAR BATTERY
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机译:I-III-VI型黄铜矿复合半导体膜及其制造薄膜太阳能电池的方法
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摘要
PROBLEM TO BE SOLVED: To provide a dense, high-quality I-III-VI type chalcopyrite compound semiconductor film with a relatively high density, and a method for manufacturing a thin-film solar battery which uses the film for a light absorption layer.SOLUTION: A method for manufacturing a I-III-VI type chalcopyrite compound semiconductor film comprises the steps of: using chalcopyrite compound semiconductor particles as raw material powder to grow a primary film on a film substrate 15 according to a method selected from a coating method, a printing method and a shock consolidation method; performing a compression treatment on the primary film, or preferably conducting a rolling treatment with a rolling pressure in a range of 9.8-490 N/mm in linear load to obtain a compressive film; and performing a thermal treatment on the compressive film in an inert gas or reducing gas, thereby obtaining a chalcopyrite compound semiconductor film 17 having a relative density of 50% or more.SELECTED DRAWING: Figure 2
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