首页> 外国专利> I-III-VI TYPE CHALCOPYRITE COMPOUND SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN-FILM SOLAR BATTERY

I-III-VI TYPE CHALCOPYRITE COMPOUND SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN-FILM SOLAR BATTERY

机译:I-III-VI型黄铜矿复合半导体膜及其制造薄膜太阳能电池的方法

摘要

PROBLEM TO BE SOLVED: To provide a dense, high-quality I-III-VI type chalcopyrite compound semiconductor film with a relatively high density, and a method for manufacturing a thin-film solar battery which uses the film for a light absorption layer.SOLUTION: A method for manufacturing a I-III-VI type chalcopyrite compound semiconductor film comprises the steps of: using chalcopyrite compound semiconductor particles as raw material powder to grow a primary film on a film substrate 15 according to a method selected from a coating method, a printing method and a shock consolidation method; performing a compression treatment on the primary film, or preferably conducting a rolling treatment with a rolling pressure in a range of 9.8-490 N/mm in linear load to obtain a compressive film; and performing a thermal treatment on the compressive film in an inert gas or reducing gas, thereby obtaining a chalcopyrite compound semiconductor film 17 having a relative density of 50% or more.SELECTED DRAWING: Figure 2
机译:解决的问题:提供致密的,具有较高密度的高质量I-III-VI型黄铜矿化合物半导体膜,以及用于制造将所述膜用作光吸收层的薄膜太阳能电池的方法。解决方案:制造I-III-VI型黄铜矿化合物半导体膜的方法包括以下步骤:使用黄铜矿化合物半导体颗粒作为原料粉末,根据选自涂覆方法的方法在膜基板15上生长初级膜。 ,印刷方法和减震方法;对所述初级膜进行压缩处理,或者优选以线性载荷在9.8-490N / mm范围内的轧制压力进行轧制处理,以获得压缩膜;在惰性气体或还原性气体中对压缩膜进行热处理,从而获得相对密度为50%以上的黄铜矿化合物半导体膜17。图2

著录项

  • 公开/公告号JP2017143105A

    专利类型

  • 公开/公告日2017-08-17

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20160021943

  • 发明设计人 ADACHI KENJI;ITO MASAHIRO;

    申请日2016-02-08

  • 分类号H01L31/0749;H01L31/18;

  • 国家 JP

  • 入库时间 2022-08-21 14:00:40

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