首页> 外国专利> ONE-TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICAL DUPLICATION DIFFICULTY FUNCTION TECHNIQUE AND RELATED RANDOM CODE GENERATION METHOD

ONE-TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICAL DUPLICATION DIFFICULTY FUNCTION TECHNIQUE AND RELATED RANDOM CODE GENERATION METHOD

机译:用于物理复制困难功能技术的一次性编程存储器单元和存储器阵列以及相关的随机代码生成方法

摘要

PROBLEM TO BE SOLVED: To provide a random code of a one-time programming memory cell.SOLUTION: A one-time programming memory cell includes a selection circuit, a first anti-fuse storage circuit, and a second anti-fuse storage circuit. The selection circuit is connected to a bit line and a word line. The first anti-fuse storage circuit is connected between a first anti-fuse control line and the selection circuit. The second anti-fuse storage circuit is connected between a second anti-fuse control line and the selection circuit.SELECTED DRAWING: None
机译:解决的问题:提供一次性编程存储单元的随机代码。解决方案:一次性编程存储单元包括选择电路,第一反熔丝存储电路和第二反熔丝存储电路。选择电路连接到位线和字线。第一反熔丝存储电路连接在第一反熔丝控制线和选择电路之间。第二反熔丝存储电路连接在第二反熔丝控制线和选择电路之间。

著录项

  • 公开/公告号JP2017130184A

    专利类型

  • 公开/公告日2017-07-27

    原文格式PDF

  • 申请/专利权人 EMEMORY TECHNOLOGY INC;

    申请/专利号JP20160171229

  • 发明设计人 O ITETSU;CHIN SHINMEI;WU MENG YI;

    申请日2016-09-01

  • 分类号G06F21/73;

  • 国家 JP

  • 入库时间 2022-08-21 14:00:38

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