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ONE-TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICAL DUPLICATION DIFFICULTY FUNCTION TECHNIQUE AND RELATED RANDOM CODE GENERATION METHOD
ONE-TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICAL DUPLICATION DIFFICULTY FUNCTION TECHNIQUE AND RELATED RANDOM CODE GENERATION METHOD
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机译:用于物理复制困难功能技术的一次性编程存储器单元和存储器阵列以及相关的随机代码生成方法
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摘要
PROBLEM TO BE SOLVED: To provide a random code of a one-time programming memory cell.SOLUTION: A one-time programming memory cell includes a selection circuit, a first anti-fuse storage circuit, and a second anti-fuse storage circuit. The selection circuit is connected to a bit line and a word line. The first anti-fuse storage circuit is connected between a first anti-fuse control line and the selection circuit. The second anti-fuse storage circuit is connected between a second anti-fuse control line and the selection circuit.SELECTED DRAWING: None
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