DEPOSITION APPARATUS OF COPPER, DEPOSITION METHOD OF COPPER, COPPER WIRING FORMATION METHOD, COPPER WIRING

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device using copper wiring inexpensively.;SOLUTION: At a place facing a substrate 100 on the lower side of a deposition chamber 10, a melting pot (CuI vapor production means) 30 is provided. A raw material heater (CuI vapor production means) 31 and a thermocouple 32 are attached to the melting pot 30, and can measure and control the temperature of the melting pot 30. Inside of the melting pot 30 is filled with particles becoming the raw material of copper deposition. This particles are composed of CuI. By heating the melting pot 30 in the vacuum, CuI vapor is produced, and the substrate 100 is exposed to this CuI vapor. By setting the temperature T_sub of the substrate 100 at about 300°C, nothing is deposited on the insulator, and Cu can be deposited only on a conductive metallic material.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT