Method for producing single-crystal gallium-containing nitride and single-crystal gallium-containing nitride produced by this method

摘要

The subject of the present invention is a method for producing a gallium-containing nitride single crystal from a gallium-containing source material by adding a mineralizer containing a group I element (IUPAC, 1989) in a supercritical ammonia solvent environment. In the autoclave, there are two temperature zones: a lower temperature dissolution zone with the source material and a higher temperature crystallization zone with at least one seed and located below the dissolution zone. A process of dissolution of said source material and crystallization of gallium-containing nitride on at least one seed, wherein the molar ratio to at least two further components, namely c) ammonia An oxygen getter from 0.0001 to 0.2, d) an acceptor dopa having a molar ratio to ammonia of 0.1 or less : It is introduced into the process environment, the acceptor dopant is a method which is characterized in that it contains manganese, iron, vanadium, carbon, or combinations thereof. The present invention also includes single crystal gallium-containing nitrides produced by this method.