Nanocrystalline diamond carbon film for 3D NAND hard mask applications

摘要

Disclosed herein are nanocrystalline diamond layers used in forming semiconductor devices and methods of use thereof. The device can include a substrate having a processing surface and a support surface, a device layer formed on the processing surface, and a nanocrystalline diamond layer formed on the processing layer and having an average particle size of 2 nm to 5 nm. . The method includes placing a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer having an average particle size of 2 nm to 5 nm on the device layer, nanocrystalline diamond Patterning and etching the layer, etching the device layer to form a feature, and ashing the nanocrystalline diamond layer from the surface of the device layer can be included. [Selection] Figure 2