Ion implantation structure made of tungsten carbide coated with tungsten

摘要

In an operation environment (500 to 900 C.) suitable for a device having a high ion bombardment site in an ion implantation apparatus and in which a gas containing a fluorine compound or a gas containing an oxide is present, for example, an ion chamber, an ion chamber Tungsten carbide coated tungsten ion implantation structure is provided which has a useful life of 2 to 5 times such as outlet.The main layer includes a tungsten metal-containing compound or a pure tungsten metal, and a tungsten carbide coating layer is provided on the main layer.(FIG.