High linearity complementary metal oxide semiconductor radio frequency power amplifier over a wide range of burst signals in WIFI applications

摘要

An RF power amplifier bias circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp up switch transistor is connected to the starting ramp signal input and selectively connects the auxiliary current source input to the ramp up capacitor. The buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at the summing node. The mirror transistor has a gate terminal corresponding to the circuit output, and a source terminal connected to the addition node and to the gate terminal.