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Thin film type hydrogen gas sensor

机译:薄膜型氢气传感器

摘要

PROBLEM TO BE SOLVED: To provide a thin film-type hydrogen gas sensor capable of detecting a hydrogen concentration with a simple structure.SOLUTION: In a thin film-type hydrogen gas sensor having a sensitive part composed of a platinum thin film formed on a top face of an insulator substrate, a film thickness of the platinum thin film is 40 nm or less, and a lower layer of the platinum thin film is provided with a metal thin film. An undulation of 10 nm or more is formed on this metal thin film. In particular, the lower layer of the metal thin film is provided with an insulation film whose surface is formed with the undulation of 10 nm or more, and the undulation of 10 nm or more is formed on the surface of the metal thin film by forming the metal thin film on the top face of this insulation film. In addition, a bridge circuit is formed by the platinum thin film of the sensing part and three resistors having a resistance value close to the resistance value of the platinum thin film of this sensing part, and this bridge circuit is driven by AC voltage, and a differential between an AC output signal and a reference signal is taken.
机译:解决的问题:提供一种能够以简单的结构检测氢浓度的薄膜型氢气传感器。解决方案:在薄膜型氢气传感器中,在其表面形成有由铂薄膜构成的敏感部。在绝缘体基板的顶面,铂薄膜的膜厚度为40nm或更小,并且铂薄膜的下层设置有金属薄膜。在该金属薄膜上形成10nm以上的起伏。特别地,金属薄膜的下层设置有绝缘膜,该绝缘膜的表面形成有10nm以上的起伏,并且通过形成在金属薄膜的表面上形成10nm以上的起伏。绝缘膜顶面上的金属薄膜。另外,由感测部分的铂薄膜和三个电阻值与该感测部分的铂薄膜的电阻值接近的电阻器形成桥电路,并且该桥电路由AC电压驱动,并且取交流输出信号和参考信号之间的差。

著录项

  • 公开/公告号JP6213866B2

    专利类型

  • 公开/公告日2017-10-18

    原文格式PDF

  • 申请/专利权人 国立大学法人 岡山大学;

    申请/专利号JP20130205987

  • 发明设计人 塚田 啓二;

    申请日2013-09-30

  • 分类号G01N27/12;

  • 国家 JP

  • 入库时间 2022-08-21 13:57:59

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