Temperature ramping using gas distribution plate heat

摘要

A method is provided for etching a dielectric layer disposed on a substrate. The method includes removing the substrate from the electrostatic chuck in an etching process chamber and cyclically etching the dielectric layer while the substrate is removed from the electrostatic chuck. Cyclic etching includes remotely generating a plasma from an etching gas mixture supplied to an etching process chamber to etch a dielectric layer disposed on a substrate at a first temperature. Etching the dielectric layer produces etching byproducts. Cyclic etching also includes moving the substrate vertically toward the gas distribution plate in the etching process chamber and flowing a sublimation gas from the gas distribution plate toward the substrate to sublimate etch byproducts. Sublimation is performed at a second temperature that is higher than the first temperature. [Selection] Figure 2