Method for depositing crystalline layer, in particular group IV semiconductor layer, and optoelectronic component at low temperature

摘要

Single-crystal IV-IV layers, especially GeSn or SiGeSn layers, which grow when excited and are composed of a plurality of elements of the IV main group and have a dislocation density of less than 106 cm-2, IV substrates, in particular silicon or germanium substrates In a method for monolithically depositing thereon, a step of applying a hydride of a first group IV element A such as Ge2H6 or Si2Cl6 and a halide of a second group IV element B such as SnCl4 are recharged. And the substrate is brought to a substrate temperature that is below the decomposition temperature of the pure hydride or radicals formed therefrom and sufficiently high that the atoms of the first element A and the second element B are incorporated into the substrate in crystalline order. A step of heating and the substrate temperature in particular between 300 ° C. and 475 ° C., and in particular a carrier gas that is N 2, Ar, He and not in particular H 2 Generating a carrier gas stream; transferring hydrides and halides and decomposition products resulting therefrom to a substrate at a total pressure of up to 300 mbar; and a deposited layer having a thickness of at least 200 nm Depositing a layer sequence consisting of IV-IV layers or IV-IV layers of the same type, in particular SiyGe1-x-ySn layers, where x 0.08 and y ≦ 1. [Selection] Figure 4