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Field effect transistor having channel core modified for back gate bias and manufacturing method
Field effect transistor having channel core modified for back gate bias and manufacturing method
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机译:具有针对背栅偏置而修改的沟道核的场效应晶体管及其制造方法
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摘要
A semiconductor device includes a substrate and a source structure and a drain structure formed on the substrate. At least one nanowire structure interconnects the source structure and drain structure and serves as a channel therebetween. A gate structure is formed over said at least one nanowire structure to provide a control of a conductivity of carriers in the channel, and the nanowire structure includes a center core serving as a backbias electrode for the channel.
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