首页> 外国专利> Method for producing high purity neodymium, high purity neodymium, a rare earth magnet to a sputtering target and high purity neodymium component consisting of high purity neodymium

Method for producing high purity neodymium, high purity neodymium, a rare earth magnet to a sputtering target and high purity neodymium component consisting of high purity neodymium

机译:高纯度钕,高纯度钕,溅射靶用稀土磁体以及由高纯度钕构成的高纯度钕成分的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of providing, both efficiently and stably, a high-purity neodymium, a sputtering target comprising a high-purity neodymium, and a thin film for a rare earth magnet using a high-purity neodymium as a component.SOLUTION: In a method for manufacturing a high-purity neodymium having a gas component-excluded purity of 4N5 or higher, a neodymium batch having a purity of 4N or higher is prepared by reducing, with distilled calcium, a raw neodymium fluoride ingredient having a gas component-excluded purity of 4N or higher, and after the neodymium has been skull-melted and then cooled gradually so as to prepare a neodymium ingot, the obtained skull ingot is cut so as to remove therefrom a bottom portion in which a segregated oxide layer segment exists, and the remaining neodymium ingot is melted with electron beams so as to remove therefrom volatile substances. The method for manufacturing a high-purity neodymium stipulates a C content of 100 wt.ppm or less, an O content of 50 wt.ppm or less, Al and Fe contents of 10 wt.ppm or less each, and a Cu content of 1 wt.ppm or less.
机译:解决的问题:提供一种能够有效且稳定地提供高纯度钕,包括高纯度钕的溅射靶以及使用高纯度钕作为稀土磁体的薄膜的技术。解决方案:一种制造排除气体成分的纯度为4N5或更高的高纯度钕的方法,通过用蒸馏钙还原粗氟化钕来制备纯度为4N或更高的钕批料。气体成分排除的纯度为4N或更高的成分,然后将钕熔化并逐渐冷却以制备钕锭,然后将所得的头骨锭切开以便从底部除去,存在分离的氧化物层段,并且剩余的钕锭通过电子束熔化,以从其中除去挥发性物质。高纯度钕的制造方法规定C含量为100重量ppm以下,O含量为50重量ppm以下,Al和Fe含量分别为10重量ppm以下,Cu含量为100重量ppm以下。 1重量ppm或更少。

著录项

  • 公开/公告号JP6087186B2

    专利类型

  • 公开/公告日2017-03-01

    原文格式PDF

  • 申请/专利权人 JX金属株式会社;

    申请/专利号JP20130066337

  • 发明设计人 高畑 雅博;

    申请日2013-03-27

  • 分类号C22B59/00;C23C14/34;C22B9/16;C22C28/00;C22B9/22;C22B5/04;

  • 国家 JP

  • 入库时间 2022-08-21 13:56:39

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