首页> 外国专利> APPARATUS AND METHOD FOR MEASURING CRYSTAL GROWTH PRESSURE OF GAS-HYDRATE, AND METHOD FOR ESTIMATING DEPTH OF SURFACE LAYER TYPE METHANE HYDRATE

APPARATUS AND METHOD FOR MEASURING CRYSTAL GROWTH PRESSURE OF GAS-HYDRATE, AND METHOD FOR ESTIMATING DEPTH OF SURFACE LAYER TYPE METHANE HYDRATE

机译:测量天然气水合物晶体生长压力的装置和方法,以及估算表面层型甲烷水合物深度的方法

摘要

PROBLEM TO BE SOLVED: To provide a measuring apparatus and measuring method, capable of easily measuring the crystal growth pressure of a gas-hydrate, and a method capable of effectively estimating the depth of a surface layer type methane hydrate distributed in a water bottom sediment in a water bottom and easily performed.;SOLUTION: An apparatus for measuring the crystal growth pressure of a gas-hydrate comprises: a test chamber 12 for supplying water W and raw material gas G to form a gas-hydrate crystal; a pressure control part 24 for setting the inside of the test chamber 12 to a predetermined pressure; and temperature control parts 28 and 30 capable of providing a temperature gradient to the test chamber 12. The test chamber 12 is constituted so that the crystal formed in the test chamber is grown against the energizing force of an energizing member 40 and includes a load measuring part 42 capable of measuring a load applied to the energizing member 40.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT
机译:解决的问题:提供一种能够容易地测量气体水合物的晶体生长压力的测量装置和测量方法,以及能够有效地估计分布在水底沉积物中的表层型甲烷水合物的深度的方法。解决方案:用于测量气体水合物的晶体生长压力的设备包括:测试室12,用于供应水W和原料气体G以形成气体水合物晶体。压力控制部24,用于将测试室12的内部设定为预定压力。以及能够向测试室12提供温度梯度的温度控制部件28和30。测试室12被构成为使得形成在测试室中的晶体抵抗激励构件40的激励力而生长,并且包括负载测量装置。零件42能够测量施加在通电部件40上的负载。;选定的图纸:图1;版权:(C)2017,JPO&INPIT

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