首页> 外国专利> FILM SURFACE VERTICAL ENERGIZATION TYPE GIANT MAGNETORESISTANCE ELEMENT AND MAGNETIC DEVICE

FILM SURFACE VERTICAL ENERGIZATION TYPE GIANT MAGNETORESISTANCE ELEMENT AND MAGNETIC DEVICE

机译:膜表面垂直激励类型的巨型磁阻元件和磁器件

摘要

PROBLEM TO BE SOLVED: To provide a film surface vertical energization type giant magnetoresistance (CPP-GMR) element and magnetic device having a high-output obtained by improving a non-magnetic intermediate layer.SOLUTION: A film surface vertical energization type giant magnetoresistance (CPP-GMR) element has a structure having a non-magnetic intermediate layer 14 (a spacer layer) arranged between Heusler alloy or iron cobalt based alloy thin films using as ferromagnetic layers 13 and 15. The Heusler alloy or iron cobalt based alloy thin film consists of a ferromagnetic alloy having a L2ordered structure, a body centered cube structure or a B-2 ordered structure, and the non-magnetic intermediate layer (the spacer layer) has an AgMgmetal compound (4≤x25 [at.%]). The magnetic device has the film surface vertical energization type giant magnetoresistance (CPP-GMR) element.SELECTED DRAWING: Figure 3
机译:解决的问题:提供一种通过改善非磁性中间层而获得的具有高输出的膜表面垂直通电型巨磁阻(CPP-GMR)元件和磁性器件。解决方案:膜表面垂直通电型巨磁阻( CPP-GMR)元件具有在非磁性中间层14(间隔层)之间配置的结构,该非磁性中间层14设置在用作铁磁性层13和15的赫斯勒合金或铁钴基合金薄膜之间。赫斯勒合金或铁钴基合金薄膜由具有L2有序结构,体心立方结构或B-2有序结构的铁磁合金组成,非磁性中间层(间隔层)具有AgMg金属化合物(4≤x<25 [at。%] )。该磁性器件具有薄膜表面垂直通电型巨磁电阻(CPP-GMR)元件。选定的图:图3

著录项

  • 公开/公告号JP2017004585A

    专利类型

  • 公开/公告日2017-01-05

    原文格式PDF

  • 申请/专利权人 TOHOKU UNIV;

    申请/专利号JP20150120250

  • 申请日2015-06-15

  • 分类号G11B5/39;H01L43/08;H01L43/10;H01F10/30;H01F10/16;

  • 国家 JP

  • 入库时间 2022-08-21 13:55:39

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