Compound semiconductor ultrafine particle, ultrafine particle thin film and photoelectric conversion device

摘要

The compound semiconductor ultrafine particle comprises a sulfide mainly composed of a Cu component, a Zn component, and a Sn component, wherein the composition ratio of the Cu component to the total of the Zn component and the Sn component is x, the composition ratio of the Zn (X, y) is A (0.75, 1.04), B (0.85, 0.86), C (0.92, 0.79) when the composition ratio of the component is y, And D (1.00, 0.72). The average particle diameter is preferably less than 5 nm. A thin film of this compound semiconductor ultrafine particle is used as a light absorption layer material of a photoelectric conversion device such as a solar cell. As a result, CZTS-based compound semiconductor ultrafine particles having good photoelectric conversion characteristics suitable for application to various photoelectric conversion devices, ultrafine particle thin films using this semiconductor compound ultrafine particle, and a light absorption layer were formed with this ultrafine particle thin film Thereby realizing a photoelectric conversion device.