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HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER
HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER
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机译:使用ZnO:Al作为N型发射极的高响应性III-V光电检测器
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摘要
A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.
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