BORON COMPOSITIONS SUITABLE FOR ION IMPLANTATION TO PRODUCE A BORON-CONTAINING ION BEAM CURRENT

摘要

The present invention relates to an improved composition for ion implantation. A dopant source comprising BF₃ and an assistant species comprising Si₂H₆wherein the assistant species in combination with the dopant gas produces a boron-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.