METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES

摘要

Methods for void-free SiO₂ filling of fine recessed features and selective SiO₂ deposition on catalytic surfaces are described. According to one embodiment, the method includes providing a substrate containing recessed features, coating surfaces of the recessed features with a metal-containing catalyst layer, in the absence of any oxidizing and hydrolyzing agent, exposing the substrate at a substrate temperature of approximately 150° C. or less, to a process gas containing a silanol gas to deposit a conformal SiO₂ film in the recessed features, and repeating the coating and exposing at least once to increase the thickness of the conformal SiO₂ film until the recessed features are filled with SiO₂ material that is void-free and seamless in the recessed features. In one example, the recessed features filled with SiO₂ material form shallow trench isolation (STI) structures in a semiconductor device.