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PLASMA CVD DEVICE AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM

机译:等离子体化学汽相淀积装置和制造磁记录介质的方法

摘要

A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
机译:等离子体CVD装置包括腔室( 102 ),阳极( 104 ),阴极( 103 ),保持电极的保持部分。待沉积的基材( 101 ),等离子壁( 88 )和防粘部件( 91 ),该部件设置在第一间隙(阳极和等离子壁之间的 81 )以及腔室的第一内表面( 102 a )和基座( 92 ),该电阻布置在防粘连部件和阳极的背面之间,并与阳极电连接。每个第一间隙的最大直径,阳极和防粘部件之间的第二间隙( 82 ),背面之间的第三间隙( 83 )阳极和基座之间的距离,等离子壁和防粘部件之间的第四间隙( 84 )和防粘部件之间的第五间隙( 85 )基座等于或小于4毫米。

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