首页> 外国专利> SEMICONDUCTING POLYMERS WITH MOBILITY APPROACHING ONE HUNDRED SQUARE CENTIMETERS PER VOLT PER SECOND

SEMICONDUCTING POLYMERS WITH MOBILITY APPROACHING ONE HUNDRED SQUARE CENTIMETERS PER VOLT PER SECOND

机译:每秒钟每伏电压接近一百平方厘米的具有导电性的半导电聚合物

摘要

One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm2 V−1 s−1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm2 V−1 s−1, the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers. The results obtained in one or more embodiments of the invention represent important progress for solution-processed plastic transistors, and provide molecular design guidelines for high-mobility and air-stable conjugated polymers.
机译:本发明的一个或多个实施例在此报告了对在晶体管通道中用半导体聚合物PBT,区域规则性半导体聚合物,PCDTPT及其氟化类似物(P2F,PCDTFBT)制成的场效应晶体管(FET)的比较研究。本发明表明,将PBT和PCDTPT简单氟化为PCDTFBT可导致空气稳定性和可靠的晶体管特性。由对准的PCDTFBT制成的FET产生稳定的阈值电压(在零伏时),饱和空穴迁移率的分布较窄,为65 cm 2 V -1 s -1 (平均超过50个独立FET器件)。在较高的源极-漏极电压(通道中的较高电场)下,迁移率接近100 cm 2 V −1 s -1 ,最高迄今为止报道的半导体聚合物的价值。在没有任何封装层的情况下,在环境空气中保持150个小时以上的高迁移率。在本发明的一个或多个实施例中获得的结果代表了溶液处理的塑料晶体管的重要进展,并为高迁移率和空气稳定的共轭聚合物提供了分子设计指南。

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