METHOD OF DETERMINING GALVANIC CORROSION AND INTERCONNECT STRUCTURE IN A SEMICONDUCTOR DEVICE FOR PREVENTION OF GALVANIC CORROSION

摘要

In some embodiments, in a method for a semiconductor device having an interconnect structure, a design layout is received. A metal line in the design layout is identified, which has at least one via thereon and does not couple downward with an oxide diffusion region. The area of a gate oxide coupled with the metal line is obtained from the design layout. The method comprises determining whether the area of the gate oxide is greater than a first predetermined value. When the area of the gate oxide is greater than the first predetermined value, a charge release path is coupled with the metal line.