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DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS

机译:金刚石的制造方法和直流等离子体增强CVD装置

摘要

Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.
机译:通过在工作台电极( 12 )之间施加DC电压的DC等离子体增强CVD工艺,由含碳气体和氢气的混合物在衬底(S)上生长钻石衬底(S)和施加电压的电极( 13 )。在通过施加DC电压来生长金刚石的步骤中,在预定的定时在级电极和电压施加电极之间施加与用于金刚石生长的DC电压相反极性的单个脉冲电压。优质钻石以稳定的增长率生产。

著录项

  • 公开/公告号US2017073836A1

    专利类型

  • 公开/公告日2017-03-16

    原文格式PDF

  • 申请/专利权人 SHIN-ETSU CHEMICAL CO. LTD.;

    申请/专利号US201615360361

  • 发明设计人 HITOSHI NOGUCHI;

    申请日2016-11-23

  • 分类号C30B25/16;C23C16/515;C23C16/517;H01J37/32;C30B25/14;C30B25/12;C30B29/04;C23C16/27;C30B25/10;

  • 国家 US

  • 入库时间 2022-08-21 13:50:41

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