DE-INTEGRATED TRENCH FORMATION FOR ADVANCED MRAM INTEGRATION

摘要

A semiconductor device may include a magnetoresistive random-access memory (MRAM) trench having a first conductive barrier liner and a second conductive barrier liner. The MRAM trench may land on a hard mask of a magnetic tunnel junction (MTJ) within an MTJ region of the semiconductor device. The semiconductor device may also include a logic trench having the first conductive barrier liner. The semiconductor device may further include a logic via having the first conductive barrier liner. The logic via may land on a first portion of a conductive interconnect (Mx) within a logic region of the semiconductor device.