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FREE LAYER, MAGNETORESISTIVE CELL, AND MAGNETORESISTIVE RANDOM ACESS MEMORY DEVICE HAVING LOW BORON CONCENTRATION REGION AND HIGH BORON CONCENTRATION REGION, AND METHODS OF FABRICATING THE SAME
FREE LAYER, MAGNETORESISTIVE CELL, AND MAGNETORESISTIVE RANDOM ACESS MEMORY DEVICE HAVING LOW BORON CONCENTRATION REGION AND HIGH BORON CONCENTRATION REGION, AND METHODS OF FABRICATING THE SAME
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机译:具有低硼浓度区和高硼浓度区的自由层,磁致电阻电池和磁致电阻随机存取存储器及其制造方法
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摘要
A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.
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