METHODS AND APPARATUS FOR IN-SITU CLEANING OF COPPER SURFACES AND DEPOSITION AND REMOVAL OF SELF-ASSEMBLED MONOLAYERS

摘要

A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H₂) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H₂) gas; exposing the substrate to the dissociated hydrogen (H₂) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.