首页> 外国专利> ENHANCEMENT OF CHIP THERMAL PERFORMANCE THROUGH SILICON THERMAL CONDUCTIVITY MODULATION

ENHANCEMENT OF CHIP THERMAL PERFORMANCE THROUGH SILICON THERMAL CONDUCTIVITY MODULATION

机译:通过硅热导率调制增强芯片的热性能

摘要

An integrated circuit includes inter-digital transducers in a silicon die, where the inter-digital transducers are driven to excite phonons in the silicon die to modulate its thermal conductivity. The thermal conductivity may be increased by exciting acoustic phonons in the silicon die, so that heat dissipation is improved, or the thermal conductivity may be decreased by exciting optical phonons so that heat dissipation is reduced. In conjunction with power management, the thermal conductivity is increased or decreased depending upon the power states of various functional units in the silicon die and depending upon various temperature sensors.
机译:集成电路在硅芯片中包括叉指换能器,其中,叉指驱动器被驱动以激发硅芯片中的声子以调节其热导率。可以通过激发硅管芯中的声子来增加热导率,从而改善散热,或者可以通过激发光子来降低热导率,从而减少散热。结合功率管理,取决于硅裸片中各种功能单元的功率状态以及取决于各种温度传感器,可以增加或减少热导率。

著录项

  • 公开/公告号US2017092558A1

    专利类型

  • 公开/公告日2017-03-30

    原文格式PDF

  • 申请/专利权人 QUALCOMM INCORPORATED;

    申请/专利号US201514864951

  • 发明设计人 ARPIT MITTAL;MEHDI SAEIDI;KAMBIZ SAMADI;

    申请日2015-09-25

  • 分类号H01L23/34;H01L25/065;H01L23/528;H01L23/367;H01L25/16;

  • 国家 US

  • 入库时间 2022-08-21 13:46:57

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