首页>
外国专利>
METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
展开▼
机译:在III型氮化物结构中空间植入多个物种的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
展开▼