Using a cut mask to form spaces representing spacing violations in a semiconductor structure

摘要

Systems, apparatuses, and methods for reducing the area of a semiconductor structure. A spacing violation may be detected for a gap width used to separate first and second regions of a layer of semiconductor material. In response to detecting the violation, the first and second regions are merged into a combined region, and then a cut mask layer is formed above the combined region. Next, an etch process is performed through the cut mask layer to remove an exposed third region within the combined region, wherein the exposed third region is interposed between first and second region portions of the combined region.