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Compensation of imaging deviations in a particle-beam writer using a convolution kernel

机译:使用卷积核补偿粒子束记录器中的成像偏差

摘要

An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.
机译:计算曝光图案以在带电粒子多光束处理设备中将期望的图案曝光在目标上以匹配参考书写工具,和/或用于补偿从图案定义装置到目标的成像与目标之间的偏差。沿着目标上图像区域中的至少一个方向的临界尺寸的期望值:期望图案以适合于参考工具的图形表示形式提供在目标上图像区域中。使用卷积核,该卷积核描述了从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。通过用卷积核对图形表示进行卷积来计算标称曝光图,当用处理设备曝光时,所述标称曝光图适合于在目标上产生标称剂量分布。

著录项

  • 公开/公告号US9520268B2

    专利类型

  • 公开/公告日2016-12-13

    原文格式PDF

  • 申请/专利权人 IMS NANOFABRICATION AG;

    申请/专利号US201514795535

  • 发明设计人 ELMAR PLATZGUMMER;

    申请日2015-07-09

  • 分类号G21K5/04;H01J37/317;H01J37/302;G06F17/50;H01J37/09;H01J37/04;

  • 国家 US

  • 入库时间 2022-08-21 13:44:05

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