首页> 外国专利> Method for manufacturing semiconductor chip that includes dividing substrate by etching groove along cutting region of substrate combined with forming modified region by laser irradiating along cutting region in substrate

Method for manufacturing semiconductor chip that includes dividing substrate by etching groove along cutting region of substrate combined with forming modified region by laser irradiating along cutting region in substrate

机译:制造半导体芯片的方法,该方法包括通过沿着衬底的切割区域蚀刻凹槽来划分衬底,以及通过沿着衬底的切割区域照射激光来形成修改区域,

摘要

A method for manufacturing a semiconductor chip includes forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region; forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region; and dividing the substrate along the cutting region by applying stress to the substrate.
机译:一种用于制造半导体芯片的方法,包括通过各向异性干法蚀刻从基板的前表面沿着切割区域形成前侧凹槽的至少一部分;通过沿着切割区域用激光照射基板的内部,在切割区域上沿着切割区域形成改质区域;通过向基板施加应力,沿着切割区域分割基板。

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