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Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits
Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits
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机译:减少集成电路中替换栅极(RPG)过程期间闪存设备中多晶硅损失的结构和方法
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摘要
The present disclosure relates to an integrated circuit (IC), including, a flash memory device region, including a pair of split-gate flash memory cells arranged over a semiconductor substrate. The pair of split gate flash memory cells respectively have a control gate (CG) including a polysilicon gate and an overlying silicide layer. A periphery circuit including, one or more high-k metal gate (HKMG) transistors are arranged over the semiconductor substrate at a position laterally offset from the flash memory device region. The one or more HKMG transistors have a metal gate electrode with an upper surface that is lower than an upper surface of the silicide layer. A method of manufacturing the IC is also provided.
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