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Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier
Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier
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机译:在预图案化的底部电极上制备铁电随机存取存储器的方法和氧化阻挡层
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摘要
Structure and method of fabrication of F-RAM cells are described. The F-RAM cell include ferroelectric capacitors forming over and with a pre-patterned barrier structure which has a planarized/chemically and/or mechanically polished top surface. The pre-patterned barrier structure includes multiple oxygen barriers having a structure of a bottom electrode layer over an oxygen barrier layer. The bottom electrode layer forms at least a part of the bottom electrode of the ferroelectric capacitor formed thereon.
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