首页> 外国专利> A METHOD TO DEPOSIT COPPER INDIUM GALLIUM DISELENIDE (CIGS)/ COPPER ZINC TIN SULPHIDE (CZTS) FOR SUPERSTRATE CIGS / CZTS SOLAR CELLS

A METHOD TO DEPOSIT COPPER INDIUM GALLIUM DISELENIDE (CIGS)/ COPPER ZINC TIN SULPHIDE (CZTS) FOR SUPERSTRATE CIGS / CZTS SOLAR CELLS

机译:沉积铜,铟镓硒(CIGS)/铜锌锡硫化物(CZTS)的方法

摘要

A method for depositing thin films over a substrate having pre-deposited film of temperature sensitive material comprising: heating the substrate having a thin film of temperature sensitive material in high vacuum chamber on a rotating heating plate to a temperature range of 25-250 ºC, creating the plasma by releasing 2.5 m Torr to 8 m Torr of working gas and applying radio frequency or direct current, depositing the plasma and then it was cert off after 2 to 20 minutes raising the temperatures of the said coated substrate to 300 to 550 ºC, creating the plasma by releasing 2-5 Torr to 8m Torr of working gas and apply RF or DC power, depositing the plasma and cutting off the plasma after 30-120 minutes, subjecting the coated substrate to the step of cooling, the vacuum was gradually released and substrate was taken out.
机译:一种在具有预沉积热敏材料薄膜的基板上沉积薄膜的方法,该方法包括:在旋转加热板上的高真空室中,将具有热敏材料薄膜的基板加热到25-250ºC的温度范围,通过释放2.5 m Torr至8 m Torr的工作气体并施加射频或直流电,沉积等离子体,然后在2至20分钟后将上述涂层基板的温度升高至300至550ºC进行测试,从而产生等离子体,通过释放2-5托到8m托的工作气体来产生等离子体,并施加RF或DC功率,沉积等离子体,并在30-120分钟后切断等离子体,使涂覆的基板经受冷却步骤,真空逐渐释放,并取出底物。

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