首页> 外国专利> Procedure for preparing a multilayer coating of carbide ceramics on, and possibly in, a piece of a carbon material, by a technique of reactive infiltration in the RMI molten state

Procedure for preparing a multilayer coating of carbide ceramics on, and possibly in, a piece of a carbon material, by a technique of reactive infiltration in the RMI molten state

机译:通过在RMI熔融态下进行反应渗透的技术,在一块碳材料上以及可能在一块碳材料中制备碳化物陶瓷的多层涂层的方法

摘要

Process for preparing a multilayer coating of metal carbides on at least one surface of a first carbon layer of a substrate, and possibly under said surface inside said first carbon layer, by a molten reactive infiltration technique , in which the following steps a) to d) are carried out: a) the surface is contacted with a solid MSi2 metal disilicide in which M is chosen from hafnium, titanium and tantalum; b) the substrate and the metal disilicide are heated to a temperature TP higher than the melting temperature of the metal disilicide; c) a plateau is observed at the temperature TP for a period sufficient for the metal disilicide to react with the carbon and form a first multilayer coating comprising a dense and continuous layer constituted by SiC, completely covered by a dense and continuous layer constituted by MC; d) the part provided with the first multilayer coating is cooled; then, at the end of step d), the following step e) is also eventually carried out: e) a second layer of carbon is deposited on the surface of the first multilayer coating; at the end of stage d) or stage e), the following successive stages f) ai) are also carried out: f) the surface of the first multilayer carbon-containing coating is also contacted, or the surface of the second layer carbon, with a solid MSi2 metal disilicide in which M is chosen from hafnium, titanium and tantalum; g) the surface of the first multilayer coating which also contains carbon and metal disiliciide, or the second layer of carbon and metal disiliciide, is heated to a temperature TP higher than the melting temperature of the metal disiliciide; h) a plateau is observed at the temperature TP for a period sufficient for the metal disilicide to react with the carbon and form a second multilayer coating comprising a dense and continuous layer constituted by SiC, completely covered by a dense and continuous layer constituted by MC; i) the part provided with the second multilayer coating is cooled; then, at the end of step i), the following step j) is also carried out: j) a third layer of carbon is deposited on the surface of the second multilayer coating; and at the end of stage i) or stage j), the following stage k) is also carried out: k) a siliciuration of the surface of the second multilayer coating also containing carbon, or of the third layer of carbon is carried out , by liquid Si, whereby a layer of SiC is obtained on the second multilayer coating.
机译:通过熔融反应渗透技术在基材的第一碳层的至少一个表面上并且可能在所述第一碳层内部的所述表面下制备金属碳化物的多层涂层的方法,其中以下步骤a)至d )进行:a)使表面与固体MSi 2金属二硅化物接触,其中M选自ha,钛和钽; b)将衬底和金属二硅化物加热到高于金属二硅化物的熔化温度的温度TP; c)在温度TP下观察到一段足以使金属二硅化物与碳反应并形成第一多层涂层的阶段,该第一涂层包括由SiC构成的致密且连续的层,并被由MC构成的致密且连续的层完全覆盖; d)冷却具有第一多层涂层的部分;然后,在步骤d)结束时,还最终进行以下步骤e):e)在第一多层涂层的表面上沉积第二碳层;在步骤d)或步骤e)的最后,还进行了以下连续的步骤f)ai):f)第一多层含碳涂层的表面也接触,或者第二层碳的表面接触,固体MSi2金属二硅化物,其中M选自ha,钛和钽; g)将同样包含碳和金属二硅化物的第一多层涂层的表面,或者将碳和金属二硅化物的第二层的表面加热至高于金属二硅化物的熔融温度的温度TP; h)在温度TP处观察到一段足以使金属二硅化物与碳反应并形成第二层多层涂层的阶段,该第二层涂层包含由SiC构成的致密且连续的层,被由MC构成的致密且连续的层完全覆盖; i)冷却具有第二多层涂层的部分;然后,在步骤i)结束时,还进行以下步骤j):j)在第二多层涂层的表面上沉积第三碳层;在步骤i)或步骤j)的最后,还进行了以下步骤k):k)对也包含碳的第二多层涂层的表面或第三层碳进行硅化处理,通过液体Si,从而在第二多层涂层上获得SiC层。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号