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HYDROPHILIC PHOTORESIST, QUANTUM DOT LAYER PATTERNING METHOD AND QUANTUM DOT LIGHT-EMITTING DIODE

机译:亲水性光致抗蚀剂,量子点层形成方法和量子点发光二极管

摘要

Provided are a photoresist, a quantum dot layer patterning method, a QLED, a quantum dot colour film and a display apparatus, which may solve the problem that an existing patterning method may disrupt quantum dots. The quantum dot layer patterning method comprises the following steps: forming a hydrophilic photoresist pattern, comprising: forming a photoresist (2) material layer on a substrate (1) using a photoresist, patterning the photoresist (2) material layer to form a photoresist pattern, and performing a hydrophilic treatment on the photoresist; spreading quantum dots (3); removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The quantum dot layer patterning method can improve the hydrophilic performance of a photoresist, and reduce the adhesion of an oleophilic quantum dot to the photoresist.
机译:提供一种光致抗蚀剂,量子点层构图方法,QLED,量子点色膜和显示装置,可以解决现有的构图方法可能破坏量子点的问题。量子点层图案化方法包括以下步骤:形成亲水性光致抗蚀剂图案,包括:使用光致抗蚀剂在基板(1)上形成光致抗蚀剂(2)材料层,对光致抗蚀剂(2)材料层进行图案化以形成光致抗蚀剂图案。 ,并对光刻胶进行亲水处理;散布量子点(3);去除保留在光刻胶图案上的量子点;并剥离光致抗蚀剂图案。量子点层构图方法可以改善光刻胶的亲水性能,并减少亲油性量子点对光刻胶的粘附。

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