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STABILIZED QUANTUM DOT STRUCTURE AND METHOD OF MAKING A STABILIZED QUANTUM DOT STRUCTURE
STABILIZED QUANTUM DOT STRUCTURE AND METHOD OF MAKING A STABILIZED QUANTUM DOT STRUCTURE
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机译:稳定的量子点结构和制造稳定的量子点结构的方法
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摘要
A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85°C and relative humidity of 5% for 500 hours.
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机译:根据一个实施方案,用于发光二极管(LED)的稳定的量子点结构包括:发光颗粒,其包含一种或多种半导体;覆盖在所述发光颗粒上的缓冲层,其中所述缓冲层包含非晶材料;以及覆盖缓冲层的阻挡层,其中阻挡层包含氧,氮和/或碳。根据另一实施方案,稳定的量子点结构包括:发光颗粒,其包含一种或多种半导体;以及经处理的缓冲层,其包括覆盖在发光颗粒上的无定形二氧化硅,其中,稳定的量子点结构在暴露时表现出至少约0.7的量子产率。在80-85°C的温度和5%的相对湿度下,在500个小时内达到约30 W / cm 2 Sup>的蓝光通量。
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