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HYBRID REFRESH WITH HIDDEN REFRESHES AND EXTERNAL REFRESHES

机译:具有隐藏刷新和外部刷新的混合刷新

摘要

A memory subsystem enables satisfying refresh needs for a memory device with hidden refreshes performed by the memory device in response to Activate commands, and external refreshes to make up a difference between the number of hidden refreshes and a minimum number of total refreshes needed during a refresh window. With a hidden refresh the memory device executes the Activate command in one memory portion as indicated by the identified memory location of the command, and executes a refresh in a different portion, such as a different sub-bank. By combining external refreshes with hidden refreshes, the memory subsystem can enable hidden refreshes without the hidden refreshes causing a back-off or retry condition from the memory device to the memory controller.
机译:存储器子系统能够满足对存储器设备的刷新需求,该存储器子系统响应于激活命令由存储器设备执行隐藏刷新,并且外部刷新以弥补隐藏刷新的次数与刷新期间所需的总刷新的最小次数之间的差。窗口。对于隐藏的刷新,存储设备在一个存储部分中执行“激活”命令,如该命令的已标识存储位置所示,并在不同部分(例如,不同的子存储区)中执行刷新。通过将外部刷新与隐藏刷新结合起来,内存子系统可以启用隐藏刷新,而不会导致隐藏刷新导致从存储设备到内存控制器的退避或重试条件。

著录项

  • 公开/公告号WO2017048441A1

    专利类型

  • 公开/公告日2017-03-23

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号WO2016US47222

  • 发明设计人 BAINS KULJIT;

    申请日2016-08-16

  • 分类号G11C11/406;G11C7/10;G11C8/12;

  • 国家 WO

  • 入库时间 2022-08-21 13:31:39

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