METHODS FOR OBTAINING ULTRA LOW DEFECT DENSITY GAN USING CROSS POINT TRENCH DESIGN

摘要

Embodiments of the invention include a semiconductor structure and a method of making such a structure. According to an embodiment, the structure may include a semiconductor substrate with a first shallow trench isolation (STI) layer formed over semiconductor substrate. A plurality of first trenches may be aligned in a row and formed through the first STI layer. In an embodiment, a first ΠΙ-nitride (III-N) layer may be formed in the first trenches and over a top surface of the first STI layer. Additionally, embodiments include a second STI layer formed over the first III-N layer and the top surface of the first STI layer. A second trench formed through the second STI layer may be oriented perpendicular to the row of first trenches. Embodiments include a second III-N layer that fills the second trench.