ALUMINUM NITRIDE THIN FILM, METHOD FOR FORMING ALUMINUM NITRIDE THIN FILM, AND ELECTRODE MATERIAL

摘要

The purpose of the present invention is to provide an aluminum nitride thin film that has excellent chemical stability such as conductivity and corrosion resistance and excellent thermal conductive properties. This aluminum nitride thin film includes at least nitrogen and oxygen, and is characterized by being in a non-crystalline state and having conductivity.