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SPIN AND CHARGE INTERCONNECTS WITH RASHBA EFFECTS
SPIN AND CHARGE INTERCONNECTS WITH RASHBA EFFECTS
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机译:自旋和电荷互连与RASHBA效果
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摘要
Described is an apparatus which comprises: an interconnect including a stack of metal layers having a first non-alloy metal adjacent to a metal and a first templating layer. The first non-alloy metal is formed of a material which is selected from a group consisting of: Ag, Cu, Al, and Au. The first templating layer is formed of a material which is selected from a group consisting of: MgO, STO, MgAlO, Ag, DySc03, GdSc03, BTO, SrRu03(SR0), and Molybdenum. And the metal is formed of a material selected from a group consisting of: Bi, Pb, and chalcogenide materials.
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